semihow rev.a0, december 2014 hsc106d/m ? repetitive peak off - state voltage (v drm =400v/600v) ? r.m.s on - state current (i t(rms) =4.0a) ? average on - state current (i t(av) =2.55a) hsc106d/m silicon controlled rectifier dec 2014 general description glassivated pnpn devices designed for high volume consumer applications such as temperature, light and speed control, process and remote control, and warning systems where reliability of operation is important. absolute maximum ratings (t a =25 ) symbol parameter value units v drm repetitive peak off - state voltage (forward) hsc106d hsc106m 400 600 v v rrm repetitive peak off - state voltage (reverse) hsc106d hsc106m 400 600 v i t(rms) r.m.s on - state current (all conduction angles) 4.0 a i t(av) average on - state current 2.55 a i tsm surge on - state current (1/2 cycle, 60hz, sine wave, non repetitive, t j =110 ) 20 a p gm forward peak gate power dissipation (pulse width 1.0 sec, tc =80 ) 0.5 w p g(av) forward average gate power dissipation (pulse width 1.0 sec, tc =80 ) 0.1 w v rgm reverse peak gate voltage 6.0 v i fgm forward peak gate current (pulse width 1.0 sec, tc =80 ) 0.2 a t stg storage temperature range - 40 to +150 t j operating junction temperature - 40 to +110 features 1. k 2. a 3. g v drm = 400v / 600 v i t(rms) = 4.0a 1.cathode symbol 2.anode 3.gate hsc106d/m 2 1 3 to - 126
semihow rev.a0, december 2014 hsc106d/m electrical characteristics ( tc =25 ) symbol parameter test conditions min typ max units i gt gate trigger current (1) v ak =6v, r l =100 ? , tc =25 tc = -40 200 500 ua v gt gate trigger voltage (1) v ak =6v, r l =100 ? , tc =25 tc = -40 0.4 0.5 0.6 0.7 0.8 1.0 v v gd non trigger gate voltage (1) v ak =12v, r l =100 ? , tc =110 0.2 v i h holding current v ak =12v, gate open, tc =25 tc = -40 0.4 0.55 3.0 6.0 ma i l latching current v ak =12v, i g =20ma, tc =25 tc = -40 5.0 7.0 ma i drm i rrm repetitive or reverse peak off - state current v ak =v drm or v rrm , p kg =1000 ? tc =25 tc =110 10 100 ua v tm peak on - state voltage (2) i fm =1.0a 2.2 v (1) r gk current is not included in measurement (2) pulse test : pulse width 2.0ms, duty cycle 2% thermal characteristics symbol parameter test conditions min typ max units r th(j - c) thermal resistance junction to case 3.0 /w r th(j - a) thermal resistance junction to ambient 75 /w tl maximum lead temperature for soldering purpose 1/8?, from case for 10second 260
semihow rev.a0, december 2014 hsc106d/m i l , latching current [ua] t j , junction temperature [ ] v gt , gate trigger voltage [v] t j , junction temperature [ ] i h , holding current [ua] t j , junction temperature [ ] i gt , gate trigger current [ua] t j , junction temperature [ ] p (av) , average on - state power dissipation [w] i t(av) , average on - state current [a] t c , case temperature [ ] i t(av) , average on - state current [a] performance curves fig 1. average current derating fig 2. maximum on - state power dissipation fig 3. typical gate trigger current vs junction temperature fig 4. typical holding current vs junction temperature fig 5. typical gate trigger voltage vs junction temperature fig 6. typical latching current vs junction temperature
semihow rev.a0, december 2014 hsc106d/m package dimension 12max 13max 1.2 0.2 0.78 0.08 8.5max 3.8 0.2 2.5 0.2 3.2 0.2 1.27typ 2.3max 2.3max 2.8max 0.5 0.1 to - 126
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